Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices

ABSTRACT

A first set of test structures for a gallium nitride (GaN) transistor that includes N field plates is disclosed, where N is an integer and X is an integer between 0 and N inclusive. A test structure TSX of the first set of test structures includes a GaN substrate, a dielectric material overlying the GaN substrate, a respective source contact abutting the GaN substrate and a respective drain contact abutting the GaN substrate. The test structure TSX also includes a respective gate overlying the substrate and lying between the respective source contact and the respective drain contact and X respective field plates corresponding to X of the N field plates of the GaN transistor, the X respective field plates including field plates that are nearest to the GaN substrate.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.15/439,191, filed Feb. 22, 2017, which claims the benefit of U.S.Provisional patent application Ser. No. 62/440,049, filed Dec. 29, 2016,the contents of both of which are herein incorporated by reference inits entirety.

FIELD OF THE DISCLOSURE

Disclosed embodiments relate generally to the field of testingintegrated circuit devices. More particularly, and not by way of anylimitation, the present disclosure is directed to a method and apparatusto model and monitor time dependent dielectric breakdown in multi-fieldplate gallium nitride (GaN) devices.

BACKGROUND

Unlike semiconductor processing on silicon-based wafers, which has beenstudied and refined for more than half a century, gallium nitrideprocessing is a relatively new technology, for which standardizedtesting is still being devised. In particular, in GaN high voltagetechnology, no standard qualification criteria have yet been determined.Processes are needed that can validate GaN and similar devices for longterm use in a relatively short amount of time.

Due to the high critical electric field of GaN, Time DependentDielectric Breakdown (TDDB) can be one of the main factors that limitthe device lifetime. Most GaN high voltage devices utilize a structurethat includes multiple field plates to shield underlying structures fromthe high voltages present. However, the presence of multiple fieldplates increases the challenge in determining the TDDB lifetime of theinner field plate region due to the electric field shielding from theouter field plates.

SUMMARY

Disclosed embodiments provide a first and a second set of teststructures and a method of using these test structures to test andmonitor variations in design and processing that can affect the TDDBlifetime of a GaN device or other device utilizing multiple fieldplates. The first set of test structures includes a separate teststructure for each level of field plate and another separate structurefor the gate. The test structure designed to test a particular fieldplate or gate eliminates the overlying field plate(s) that can shieldthe tested structure. For example, a test structure for the gateincludes only the source contact, the drain contact and the gate, withno field plates, allowing the gate to be separately qualified; a teststructure for the first field plate (which for the purposes of thisapplication are numbered sequentially from the field plate closest tothe substrate outward) includes the source contact, the drain contact,the gate and the first field plate; a test structure for the secondfield plate includes the source contact, the drain contact, the gate,the first field plate and the second field plate; etc. The second set oftest structures focuses on the inner field plates. In this second set oftest structures, only the source and drain contacts and the inner fieldplate under test are provided in the respective test structure.

Testing includes subjecting each of the first test structures to highvoltages on the drain contact, i.e., higher than the normal operatingvoltages to which the specific structure-under-test will be exposed, anddetermining the mean time to failure (MTTF) of the device under each ofthe subject voltages. Testing can also include determining a time tofailure distribution in order to build a reliability model. The valuesdetermined for the MTTF can then be projected for normal operatingconditions. If the projected MTTF is acceptable, testing is completed;otherwise changes can be proposed for the device structure and retested.Once testing has been completed and the design and processing arefinalized, the disclosed test structures can be incorporated into scribestructures on the production chip. This provides a mechanism by whichproduction can be monitored on a periodic basis, by probing the scribestructures to ensure that processing has not drifted away fromspecifications.

The second set of test structures is useful when one or more of theinner field plates fails earlier than the outer field plates for anyreason. This set provides the simplest structure that can be used totest a particular field plate without having to worry about thereliability of other field plates. Testing on the second set of teststructures can take two forms. In a three-terminal mode, a voltage isapplied to the field plate that is less than the threshold voltage forthe field plate to pinch off the channel. At the same time, the sourceis held at the lower rail and a test voltage is applied to the drainuntil failure. In a two-terminal mode, the source contact is eitherfloating or not connected, while the test voltage is applied to thedrain contact until the field plate fails.

In one aspect, an embodiment of a first set of (N+1) test structures fora gallium nitride (GaN) transistor that comprises N field plates isdisclosed, N being an integer and X being an integer between 0 and Ninclusive. A test structure TS_(X) includes a GaN substrate; adielectric material overlying the GaN substrate; a respective sourcecontact abutting the GaN substrate; a respective drain contact abuttingthe GaN substrate; a respective gate overlying the substrate and lyingbetween the respective source contact and the respective drain contact;and X respective field plates corresponding to X of the N field platesof the GaN transistor, the X field plates comprising field plates thatare nearest to the GaN substrate.

In another aspect, an embodiment of a test method is disclosed. The testmethod includes providing a first set of test structures TS₀ throughTS_(N) for a gallium nitride (GaN) transistor that comprises N fieldplates, N being an integer and X being an integer between 0 and Ninclusive, a test structure TS_(X) of the first set of test structurescomprising: a GaN substrate, a dielectric material overlying the GaNsubstrate, a respective source contact abutting the GaN substrate, arespective drain contact abutting the GaN substrate, a respective gateoverlying the substrate and lying between the respective source contactand the respective drain contact, X field plates corresponding to Xfield plates of the N field plates of the GaN transistor that arenearest to the GaN substrate, and a respective input/output pad coupledto each of the respective source contact, the respective drain contactand the respective gate; for each test structure TS_(X), the test methodcomprising: applying a stress voltage to the respective drain contact ofTS_(X) until a dielectric breakdown condition is detected; and recordingthe time-to-failure of TS_(X) at the stress voltage.

In yet another aspect, an embodiment of an integrated circuit (IC) chipis disclosed. The IC chip includes a substrate comprising galliumnitride (GaN); a dielectric material overlying the substrate; atransistor formed in an active circuitry region of the IC chip, thetransistor comprising a first gate overlying the substrate, a firstsource contact abutting the substrate, a first drain contact abuttingthe substrate and N field plates overlying the gate, N being an integer;and a scribe structure formed outside the active circuitry region of theIC chip, the scribe structure comprising a set of (N+1) first teststructures for the transistor, a test structure TS_(X) of the first setof test structures comprising: a respective source contact abutting theGaN substrate, a respective drain contact abutting the GaN substrate, arespective gate overlying the substrate and lying between the respectivesource contact and the respective drain contact, X field plates, X beingan integer between 0 and N inclusive, the X field plates correspondingto X field plates of the N field plates of the transistor that arenearest to the substrate, and a respective isolation barrier separatingtest structure TS_(X) from adjacent test structures.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure are illustrated by way of example,and not by way of limitation, in the figures of the accompanyingdrawings in which like references indicate similar elements. It shouldbe noted that different references to “an” or “one” embodiment in thisdisclosure are not necessarily to the same embodiment, and suchreferences may mean at least one. Further, when a particular feature,structure, or characteristic is described in connection with anembodiment, it is submitted that it is within the knowledge of oneskilled in the art to effect such feature, structure, or characteristicin connection with other embodiments whether or not explicitlydescribed. As used herein, the term “couple” or “couples” is intended tomean either an indirect or direct electrical connection unless qualifiedas in “communicably coupled” which may include wireless connections.Thus, if a first device couples to a second device, that connection maybe through a direct electrical connection, or through an indirectelectrical connection via other devices and connections.

The accompanying drawings are incorporated into and form a part of thespecification to illustrate one or more exemplary embodiments of thepresent disclosure. Various advantages and features of the disclosurewill be understood from the following Detailed Description taken inconnection with the appended claims and with reference to the attacheddrawing figures in which:

FIGS. 1A-1F depict individual test structures of a set of teststructures for a GaN device having multiple field plates according to anembodiment of the disclosure;

FIG. 2 depicts test data collected to determine mean time to failure forthe innermost field plate using two different process conditionsaccording to an embodiment of the disclosure;

FIG. 3A depicts an overhead view of an example semiconductor wafer thatincludes a number of dies on which are formed GaN circuits according toan embodiment of the disclosure;

FIG. 3B depicts an enlargement of a portion of the wafer of FIG. 3A;

FIGS. 3C and 3D depict cross sections through an example scribestructures that includes the disclosed set of test structures accordingto an embodiment of the disclosure;

FIGS. 4A and 4B depict a method of testing a GaN or semiconductor devicehaving multiple field plates according to an embodiment of thedisclosure; and

FIGS. 4C and 4D depict a further method of testing specific field platesof a GaN or semiconductor device having multiple field plates accordingto an embodiment of the disclosure.

DETAILED DESCRIPTION OF THE DRAWINGS

Specific embodiments of the invention will now be described in detailwith reference to the accompanying figures. In the following detaileddescription of embodiments of the invention, numerous specific detailsare set forth in order to provide a more thorough understanding of theinvention. However, it will be apparent to one of ordinary skill in theart that the invention may be practiced without these specific details.In other instances, well-known features have not been described indetail to avoid unnecessarily complicating the description.

A typical GaN transistor includes a thin layer of aluminum galliumnitride (AlGaN) located above a GaN layer. Because the AlGaN and GaNlayers exhibit different bandgaps, they are said to meet at aheterojunction. Under proper conditions, a two-dimensional electron gas(2-DEG) is formed at this heterojunction interface of the GaN and AlGaNlayers. In the 2-DEG, some electrons are unbound to atoms and free tomove, providing higher mobility as compared with other types oftransistors. Accordingly, little or no doping of the substrate isrequired for operation of the GaN transistor.

FIG. 1A represents a cross-section of both an example GaN device and afirst test structure 100A for the GaN device according to an embodimentof the disclosure. The GaN device in this example embodiment is a powertransistor designed for high voltages, e.g., 600 volts. However, theteachings presented herein are equally applicable to other semiconductordevices and is not limited to the particular devices described below.Test structure 100A includes a substrate 102 and an epitaxial layer 104formed on the upper surface of substrate 102. In one embodiment,substrate 102 comprises gallium nitride and epitaxial layer 104comprises aluminum gallium nitride. In other embodiments, two activelayers, such as a GaN layer and an AlGaN layer, are formed on asubstrate comprising, e.g., silicon, silicon carbide, sapphire, or othersemiconductor material.

Although the discussion that follows is directed primarily toembodiments based on GaN, it will be understood that the disclosedapparatus and method are not so limited. In one embodiment, the teststructures contain nitride compounds of elements from Group III of thePeriodic Table of Elements. In one embodiment, the active layers havethe formula B_(w)Al_(x)In_(y)Ga_(z)N, in which w, x, y and z each has asuitable value between zero and one (inclusive). The reference herein toB_(w)Al_(x)In_(y)Ga_(z)N or a B_(w)Al_(x)In_(y)Ga_(z)N material refersto a semiconductor material having nitride and one or more of boron,aluminum, indium and gallium. Examples of B_(w)Al_(x)In_(y)Ga_(z)Nmaterials include GaN, AlN, AlGaN, AlInGaN, InGaN, and BAlInGaN, by wayof illustration. A B_(w)Al_(x)In_(y)Ga_(z)N material may include othermaterials besides nitride, boron, aluminum, indium and/or gallium. Forexample, a B_(w)Al_(x)In_(y)Ga_(z)N material may be doped with asuitable dopant such as silicon and germanium.

A source contact 106, drain contact 108 and gate 110, which can beformed of conductive material such as titanium, nickel, aluminum, goldand ohmic metals, complete the basic elements of the transistor. Sourcecontact 106 and drain contact 108 both abut the substrate. In oneembodiment (not specifically shown), gate 110 also abuts the substrate,e.g. with a p-type GaN substrate in an enhancement mode transistor. Inone embodiment shown in FIG. 1A, a gate dielectric separates gate 110from substrate 102. Given the need to place gate 110 near or touchingepitaxial layer 104, which causes the dielectric layer under gate 110 tobe relatively thin, gate 110 is not able to withstand the electric fieldgenerated by the large gate/drain voltages that exist during operationof the GaN transistor 100A. To protect gate 110 from these highvoltages, one or more field plates 112, 114, 116, which are also formedof a conductive material, are used to reduce the electric field producedby the high voltage. As seen in this embodiment, field plate 112 iscoupled to gate 110, so that these two structures share the samevoltage, but field plate 112 extends laterally closer to drain contact108 that does gate 110. Field plate 114 is coupled to source contact106, lies above both gate 110 and field plate 112 and extends laterallycloser to drain contact 108 than the two lower elements. Field plate 116is also coupled to source contact 106, lies above field plate 114 andextends laterally closer to drain contact 108 than field plate 114. Inone embodiment, not specifically shown, each of field plates 112, 114,116 are coupled to gate 110. In one embodiment, also not specificallyshown, field plates 112, 114 are coupled to gate 110 and field plate 116is coupled to the source. In one example, for a GaN device that issubjected to 600 volts at the gate, field plate 116 shields gate 110 andfield plates 112, 114 from approximately 200 volts; field plate 114shields both gate 110 and field plate 112 from an additional 200 voltsand field plate 112 shields gate 110 from a final 200 volts. Adielectric material 118, which can be silicon oxide, silicon nitride, orother dielectric material, fills the spaces between the conductiveelements and insulates the various elements. It will be understood thatalthough dielectric material 118 is shown as a monolithic material,dielectric material 118 is generally laid down in various layers asdifferent metallization layers are formed. It will further be understoodthat the specific materials used to form the GaN device are not relevantto the disclosed test structures and method of testing, but are givensolely as examples. Additionally, although three field plates are shownin FIG. 1A, a GaN device can have either more or fewer field plates,depending on the voltages used, the materials, and the specific needs ofthe device.

As noted previously, one of the most common failures seen in testingdevice 100A is time dependent dielectric breakdown. One of thespecifications that the Joint Electronic Device Engineering Council(JEDEC) has provided for silicon is operation for 1000 hours at 150° C.However, in testing the longevity of GaN device 100A, examples of TDDBhave occurred at 2000 hours, e.g., at a corner of the gate 110 or fieldplate 112. Such failures illustrate the need for a testing methodologyfor the GaN device that can be performed quickly, e.g., in less than anhour, to certify that all levels of the GaN device can provide a desiredlifetime, typically ten years. However, given the shielding action ofthe field plates 112, 114, 116, testing the reliability of device 100Aas a whole will generally indicate only the reliability of outer fieldplate 116 and will not test the reliability of the underlying structuresseparately.

In order to test each element of transistor 100A, a first suite or setof additional test structures is provided, as shown in FIGS. 1B-1D. Forexample, because test structure 100B in FIG. 1B does not include fieldplate 116, test structure 100B can be utilized to test the reliabilityof field plate 114. Similarly, test structure 100C in FIG. 1C, whichdoes not include either of field plates 114, 116, can be utilized totest the reliability of field plate 112; and test structure 100D in FIG.1D, which does not include any field plates 112, 114, 116, can beutilized to test the reliability of gate 110. A second set of teststructures can also be provided to test the inner field plates in aneven more simplified structure, as shown in FIGS. 1E-1F. For the exampletransistor having three field plates 112, 114, 116, a further teststructure for each of the inner field plates includes only the fieldplate under test, the source contact and the drain contact. Teststructure 100E in FIG. 1E includes only source contact 106, draincontact 108 and field plate 114, with field plate 114 acting as a gate.Test structure 100F in FIG. 1F includes only source contact 106, draincontact 108 and field plate 112, with field plate 112 acting as a gate.When these test structures are subjected to high voltages, the remainingfield plate acts as the gate in the structure.

Once all of the test structures, e.g., test structures 100A-100F, arefabricated using desired process conditions, testing can be performed.The testing is designed to accelerate failure of the element beingtested, either a field plate or gate. In one embodiment, during thetesting, source contact 106 is grounded and the voltage on gate 110 isheld below the threshold voltage V_(TH) to ensure that the transistor isturned off. A high drain voltage is then applied to accelerate theelectron-field between gate 110 and drain contact 108. The specificvoltage applied during testing is dependent on the specific teststructures and the voltage acceleration factor. In one embodiment, theapplied voltage is three to six times the normal operating voltage towhich the structure-under-test is usually subjected. This bias conditionis held, while the gate-to-drain leakage is monitored. When the devicefails due to dielectric breakdown, the leakage current increasesabruptly; the time-to-failure is then noted as the time under stress upto the point of failure. FIG. 2 discloses a graph that plots the squareroot of the gate/drain voltage (V_(DG)) against a logarithmic scale oftime in seconds. When plotted in this manner, the mean time to failure,as determined at various voltages, tends to respond linearly and can beprojected to lower voltages to provide an estimated lifetime at normaloperating voltages. As seen in graph 200, a first process condition canbe predicted to provide a lifetime of 1×10⁹ seconds under normalconditions or a bit over thirty years. A second process condition can bepredicted to provide a lifetime greater than 1×10¹¹ seconds, or over ahundred percent increase in predicted lifetime. This test is, of course,only testing one level of the device; however, if all levels test ashaving a lifetime at or above the desired range, the device as a wholecan be verified for the desired lifetime.

The disclosed structures and process provide valuable information toassist in proper design of a GaN device. However, both the structuresand the process can also be utilized to ensure that processing of thewafers during production remain within specification. In order to do so,the test structures can be incorporated into the scribe structuresadjacent the scribe lines for the wafer. FIG. 3A depicts an overheadview of a semiconductor wafer 300A that includes multiple dies 304 onwhich are formed a GaN device having multiple field plates. In oneembodiment, the GaN device is a power transistor. The number of dies 304can vary greatly depending upon the device geometry, the size of thewafer and other factors; the layout shown is only one possible example.The dies 304 may be virtually any type of integrated circuits, such asmicroprocessors, graphics processors, combined microprocessors andgraphics processors, memory devices, application specific integratedcircuits or virtually any other type of semiconductor based circuits. Ifimplemented as processors of one sort or another, the dies 304 may besingle or multicore. Four of the dies 304 are located in region 302,which is shown encircled by a dotted line. FIG. 3B depicts anenlargement of region 302 and the four included dies 304.

FIGS. 3A and 3B depict the semiconductor wafer 300A from the circuitryside of the dies 304 and at a stage in processing just prior to diesingulation. Thus, the surfaces that are visible in FIGS. 3A and 3Bconsist of inter-level dielectric materials and scribe lines asdescribed more fully below. The portions of the wafer 300A that consistof semiconductor materials are generally beneath those portions that arevisible in FIGS. 3A and 3B. In enlargement 300B, dies 304 are shown tobe separated by dicing alleys 306 that run between the separate dies304; dies 304 will be singulated from the wafer 300A generally along thedicing alleys 306. The singulation may be carried out by a variety oftechniques, such as sawing, laser cutting, combinations of these with orwithout breaking or the like. Whether by saw, laser or the like, thesingulation process places great stresses on the perimeter of the die.

Between dicing alleys 306, each die 304 includes an active circuitryregion 308 that is surrounded by a scribe structure 310. The activecircuitry region 308 performs the work for which the die wasmanufactured and includes a number of input/output (I/O) pads 312 thatmay be bump pads, wire bond pads or other type of I/O pads as desired.Beneath the I/O pads 312 but not visible in FIG. 3B, is a series ofstacked interconnect layers leading down to device circuitry, such asthe source contact, drain contact and gate of a transistor. While only afew I/O pads 312 are depicted for simplicity of illustration, theskilled artisan will appreciate that there may be thousands of suchpads. The I/O pads 312 are surrounded laterally by inter-leveldielectric material 314. The scribe structure 310 is designed to act asboth a crack stop and also as a protective structure to protect theactive circuitry region 308 during subsequent singulation, as well asproviding a region where test structures can be incorporated for ease oftesting after a production run.

FIG. 3C depicts a cross-section of a scribe structure taken along theline A-A′ according to an embodiment of the disclosure. Scribe structure300C includes test structures TS₀ through TS₃, such that a teststructure is available for testing gate 320 and for testing each offield plates 322, 324, 326. Test structure TS₃ includes source contact316, drain contact 318, gate 320, and field plates 322-326. Isolationstructures 330 separate the various test structures from each other toprevent electrical interference between the test structures. In theembodiment shown, isolation structures 330 are trench isolation,although isolation implantation can also be used for isolation. Teststructure TS₀ can be utilized to test gate 320; test structure TS₁ canbe utilized to test field plate 322; test structure TS₂ can be utilizedto test field plate 324; and test structure TS₃ can be utilized to testfield plate 326. Although not specifically illustrated in FIG. 3C,source contact 316, gate 320 and drain contact 318 of each of teststructures TS₀, TS₁, TS₂, TS₃ are coupled to a respective I/O pad 312 asshown in FIG. 3B. Accordingly, appropriate voltages can be applied tothe I/O pads 312 that correspond to source contact 316, gate 320 anddrain contact 318 of each of test structures TS₀, TS₁, TS₂, TS₃, TS2 ₁,TS2 ₂.

Similarly, FIG. 3D depicts a cross-section of another scribe structuretaken along the line A-A′ according to an embodiment of the disclosure.Scribe structure 300D includes test structures TS2 ₁ through TS2 ₂, suchthat a test structure is available for testing each of inner fieldplates 322, 324. Test structure TS2 ₂ includes source contact 316, draincontact 318, and field plate 324 and test structure TS2 ₁ includessource contact 316, drain contact 318, and field plate 322. Isolationstructures 330 separate the various test structures from each other toprevent electrical interference between the test structures. Teststructure TS2 ₁ can be utilized to test field plate 322 and teststructure TS2 ₂ can be utilized to test field plate 324. Using themethod described below in FIG. 4, each of test structures TS₀, TS₁, TS₂,TS₃, TS2 ₁, TS2 ₂ can be tested at the wafer level prior to singulationand/or after singulation.

FIGS. 4A-D depict an overall test method for testing a gallium nitride(GaN) transistor or other semiconductor device that comprises N fieldplates, N being an integer, X being an integer between 0 and Ninclusive, and Y being an integer between 1 and (N−1) inclusive. Testmethod 400A includes providing (405) a set of test structures TS₀through TS_(N). A test structure TS_(X) of the set of test structuresincludes a GaN substrate, a dielectric material overlying the GaNsubstrate, a source contact abutting the GaN substrate, a drain contactabutting the GaN substrate, a gate overlying the substrate and lyingbetween the source contact and the drain contact, and X field platescorresponding to X of the N field plates of the GaN transistor that arenearest to the GaN substrate.

The test method includes setting (410) X to zero and setting a stressvoltage to a lowest test value. The stress voltage is applied (415) tothe drain contact of TS_(X) until a dielectric breakdown condition isdetected, i.e., by determining that the gate/drain leakage has abruptlyincreased. In at least one embodiment, the stress voltage is appliedwhile holding the source contact at a lower rail and holding the gatevoltage below the threshold voltage. The time-to-failure of TS_(X) atthe stress voltage is recorded (420). A determination is then made (425)whether all test structures have been tested, i.e., whether X is equalto N. If all of the test structures have not been tested, then X isincremented (430) and the method returns to point A to continue thetesting by applying the stress voltage to the next test structure. Ifall of the test structures have been tested and the test structures wereformed in the scribe structure of a production chip, testing at a singlevoltage can indicate whether any drift in the lifetime of the structureat the given voltage has occurred. However, if the testing is beingperformed in order to verify the design and extrapolate the lifetime ofthe device, the testing continues at point B to test at other voltages.Testing of multiple voltages on a production chip can be used todetermine whether there is drift in the voltage acceleration factor.

At point B in method 400B, a determination is made (435) whether thetime-to-failure has been determined at all stress voltages. If this hasnot occurred, X is set (440) to zero again and the stress voltage is setto a next test value, then the method returns to point A to apply thenew test voltage. It will be understood that since the device is testedto failure, each new test voltage will be applied to a new set of teststructures. If the time-to-failure has been determined for all testvoltages, the entire testing operation, i.e., operations 410 through 440can be repeated (445) a selected number of times in order to obtainaverage values of the time-to-failure. The number of times the entireoperation is performed can be part of the design of the testingprotocol. Once all testing has been completed, the lifetime of thedevice at normal operating conditions can be extrapolated (450) from thetest results. Additionally, the obtained test results can also be usedto determine (455) the time-to-failure distributions, which can provideadditional information regarding reliability.

Test methods 400C and 400D perform the same operations on the second setof test structures. Method 400C includes providing (460) a set of teststructures TS2 ₁ through TS2 _((N-1)). A test structure TS2 _(Y) of thesecond set of test structures includes a GaN substrate, a dielectricmaterial overlying the GaN substrate, a source contact abutting the GaNsubstrate, a drain contact abutting the GaN substrate, and a Y^(th)field plate corresponding to the Y^(th) of the N field plates of the GaNtransistor. As noted previously, the Y^(th) field plate will act as thegate for the TS2 _(Y) structure.

The test method includes setting (465) Y to one and setting a stressvoltage to a lowest test value. The stress voltage is applied (470) tothe drain contact of TS2 _(Y) until a dielectric breakdown condition isdetected. In at least one embodiment, the stress voltage is appliedwhile holding the source contact at a lower rail and holding the gatevoltage below the threshold voltage. In one embodiment, the stressvoltage is applied while allowing the source contact to float or bedisconnected. The time-to-failure of TS2 _(Y) at the stress voltage isrecorded (475). A determination is then made (480) whether all teststructures have been tested, i.e., whether Y is equal to (N−1). If allof the test structures have not been tested, then Y is incremented (485)and the method returns to point C to continue the testing by applyingthe stress voltage to the next test structure. Otherwise, the testingcontinues at point D in method 400D to test at other voltages.

At point D, a determination is made (490) whether the time-to-failurehas been determined at all stress voltages. If this has not occurred, Yis set (492) to one again and the stress voltage is set to a next testvalue, then the method returns to point C to apply the new test voltage.Again, each new test voltage will be applied to a new set of teststructures. If the time-to-failure has been determined for all testvoltages, the entire testing operation, i.e., operations 465 through 492can be repeated (494) a selected number of times in order to obtainaverage values of the time-to-failure, which can be part of the designof the testing protocol. Once all testing has been completed, thelifetime of the specific field plates at normal operating conditions canbe extrapolated (4496) from the test results. Additionally, the obtainedtest results can also be used to determine (498) the time-to-failuredistributions, which can provide additional information regardingreliability.

Applicants have disclosed a set of test structures and a method ofutilizing the set of test structures to validate an expected lifetime ofa GaN device that uses a plurality of field plates. Successive teststructures in the set of test structures remove one or more of theoutermost field plates in order to test the remaining structures. Thedisclosed structures and methods can be utilized both in testing andvalidating a new design and in monitoring a production process to ensurethat the quality of the processing and the GaN device remains at thedesign level.

Although various embodiments have been shown and described in detail,the claims are not limited to any particular embodiment or example. Noneof the above Detailed Description should be read as implying that anyparticular component, element, step, act, or function is essential suchthat it must be included in the scope of the claims. Reference to anelement in the singular is not intended to mean “one and only one”unless explicitly so stated, but rather “one or more.” All structuraland functional equivalents to the elements of the above-describedembodiments that are known to those of ordinary skill in the art areexpressly incorporated herein by reference and are intended to beencompassed by the present claims. Accordingly, those skilled in the artwill recognize that the exemplary embodiments described herein can bepracticed with various modifications and alterations within the spiritand scope of the claims appended below.

What is claimed is:
 1. A test method for testing a Gallium-Nitride (GaN) device, comprising: providing a first set of (N+1) test structures that comprises N field plates, N being an integer and X being an integer between 0 and N inclusive, each test structure TS_(X) of the first set of test structures comprising: a GaN substrate; a dielectric material overlying the GaN substrate; a respective source contact abutting the GaN substrate; a respective drain contact abutting the GaN substrate; a respective gate overlying the substrate and lying between the respective source contact and the respective drain contact; and X respective field plates corresponding to X of the N field plates of the GaN transistor, the X field plates comprising field plates that are nearest to the GaN substrate; and for each test structure TS_(X), applying a stress voltage to the drain contact of test structure TS_(X) until a dielectric breakdown condition is detected and recording the time-to-failure of test structure TS_(X) at the stress voltage.
 2. The test method of claim 1, wherein first set of (N+1) test structures further comprises a respective input/output pad coupled to each of the respective source contact, the respective drain contact and the respective gate of each test structure.
 3. The test method of claim 2, wherein first set of (N+1) test structures comprises an epitaxial layer formed in the GaN substrate.
 4. The test method of claim 3, wherein a first field plate of the N field plates is electrically coupled to the gate and extends laterally beyond the gate towards the drain contact.
 5. The test method of claim 4, wherein a second field plate of the N field plates is electrically coupled to a first structure selected from a group consisting of the gate and the source contact and extends laterally beyond the first field plate towards the drain contact.
 6. The test method of claim 5, wherein a third field plate of the N field plates is electrically coupled to a second structure selected from a group consisting of the gate and the source contact and extends laterally beyond the second field plate towards the drain contact.
 7. The test method of claim 4, wherein first set of (N+1) test structures further comprises respective isolation structures separating each respective pair of adjacent test structures.
 8. The test method of claim 7, wherein the respective isolation structures are trench isolation.
 9. The test method of claim 7, wherein the respective isolation structures are isolation implantations.
 10. The test method of claim 7, wherein the respective gate further overlies at least a portion of the dielectric material.
 11. The test method of claim 10, further comprising: providing a second set of (N−1) test structures with Y being an integer between 1 and (N−1) inclusive, a test structure TS_(Y) of the second set of (N−1) test structures comprising: a respective source contact abutting the GaN substrate; a respective drain contact abutting the GaN substrate; and a respective field plate corresponding to the Y^(th) field plate of the GaN transistor; for each test structure TS_(Y), the test method comprising: applying a stress voltage to the drain contact of TS_(Y) until a dielectric breakdown condition is detected; and recording the time-to-failure of TS_(Y) at the stress voltage.
 12. The test method of claim 1, further comprising providing a second set of (N−1) test structures with Y being an integer between 1 and (N−1) inclusive, each test structure TSy of the second set of (N−1) test structures comprising: a respective source contact abutting the GaN substrate; a respective drain contact abutting the GaN substrate; and a respective field plate corresponding to the Y^(th) field plate of the GaN transistor.
 13. A test method comprising: providing a first set of test structures TS₀ through TS_(N) for a gallium nitride (GaN) transistor that comprises N field plates, N being an integer and X being an integer between 0 and N inclusive, each test structure TS_(X) of the first set of test structures comprising: a GaN substrate, a dielectric material overlying the GaN substrate, a respective source contact abutting the GaN substrate, a respective drain contact abutting the GaN substrate, a respective gate overlying the substrate and lying between the source contact and the drain contact, X respective field plates corresponding to X field plates of the N field plates of the GaN transistor that are nearest to the GaN substrate, and a respective input/output pad coupled to each of the respective source contact, the respective drain contact and the respective gate; for each test structure TS_(X), the test method comprising: applying a stress voltage to the drain contact of test structure TS_(X) until a dielectric breakdown condition is detected; and recording the time-to-failure of test structure TS_(X) at the stress voltage.
 14. The test method of claim 13, wherein the first set of test structures are provided in a scribe structure and the test method further comprises determining whether there is in a determined lifetime of the GaN transistor at the stress voltage.
 15. The test method of claim 13, further comprising: incrementing the stress voltage; performing the applying, recording and incrementing a selected number of times, each of the selected number of times being performed on a new first set of test structures; and using a plurality of the recorded times-to-failure of the test structure to extrapolate a mean time-to-failure at normal operating voltages.
 16. The test method of claim 15, further comprising using the plurality of the recorded times-to-failure of the test structure to determine a time-to-failure distribution.
 17. The test method of claim 13, further comprising: incrementing the stress voltage; performing the applying, recording and incrementing a selected number of times, each of the selected number of times being performed on a new first set of test structures; and determining whether there has been a drift in a voltage acceleration factor.
 18. The test method of claim 13, further comprising holding the gate at a voltage that is lower than the threshold voltage of the GaN transistor.
 19. The test method of claim 13, further comprising holding the source contact at a lower rail.
 20. The test method of claim 13, wherein the stress voltage is in the range of approximately three to six times the normal operating voltage. 